Semiconductor Devices Research Laboratory

Completed Research Projects


Title:Physics Based Modeling and Simulation of Channel Material Engineered RingFET for Sensing Applications (F.No.-43/297/2014(SR))
Sponsored by: UGC
Duration: 36 months (i.e. 2015-2018)
Worth: Rs. 14.57 Lakhs

Title: Investigation of Junctionless Field effect transistors as sensor (PI)
Sponsored by: DU
Duration: 12 months (i.e. 2015-2016)
Worth: Rs. 3 Lakhs

Title: Device and Circuit Level Performance Investigation of Junctionless Field Effect Transistors and its Applications(PI)
Sponsored by: DU
Duration: 12 months (i.e. 2014-2015)
Worth: Rs. 2.5 Lakhs

Title: Analytical Modeling and Simulation for sub-100nm Advance Tunnel FET architectures for RF/Microwave and Biosensing Applications
Sponsored by: DST
Duration: 36 months (i.e. 2012-2015)
Worth: Rs. 31.20 Lacs

Title: Capacitive Modeling, Simulation, Characterization and Noise Analysis of Surrounded/Cylindrical Gate MOSFET (SGT/CGT) for High Frequency Applications
Sponsored by: CSIR
Duration: 48 months (i.e. 2010-2014)
Worth:Rs. 15 Lacs

Title: Circuit and Noise Performance analysis of Tunnel Field effect transistor (PI)
Sponsored by: DU
Duration: 12 months (i.e. 2013-2014)
Worth: Rs. 2.8 Lakhs

Title: Noise Analysis of Tunnel Field Effect Transistors for Biosensing applications and Impact of Noise on Circuit Performance (PI)
Sponsored by: DU
Duration: 12 months (i.e. 2012-2013)
Worth: Rs. 2.5 Lakhs

Title: Modeling and simulation of Nanoscale Dual Material Gate Insulated Shallow Extension Silicon on Nothing MOSFET for Low voltage low power applications
Sponsored by: UGC
Duration: 36 months (i.e. 2009-2012)
Worth: Rs. 9.21 Lakhs

Title: Physics based Modeling and Simulation of sub-100 nm Recessed channel (RC) and Insulated shallow extension (ISE) MOSFET with gate electrode work-function engineering structure for high performance applications (PI).
Sponsored by:DRDO
Duration:12 months (i.e. 2011-2012)
Worth: Rs. 4.7 Lakhs

Title: Modeling, Simulation & Characterization of Modified Different Gate Geometric Double Gate High Electron Mobility Transistor for High Power and High Frequency Applications with Two Separate/Common Gate Control
Sponsored by: DST
Duration: 36 months (i.e. 2008-2011)
Worth: Rs. 19.67 Lakhs

Title: Modeling, Simulation & Characterization of Modified Different Gate Geometric High Electron Mobility Transistor for Tera Hertz Applications
Sponsored by: DRDO
Duration: 36 months (2007-2010)
Worth: Rs.14.83 Lakhs

Title: Modeling Simulation & Characterization of Modified Double Gate Sub-100 nm MOSFET Structure for ULSI Circuit Applications
Sponsored by: DRDO
Duration: 36 months (2006-2009)
Worth: Rs. 11.73 Lakhs

Title: Two-Dimensional Physics Based Modeling and Simulation of a Graded Channel (GC) Multiple SOI-MOSFET for Sub-100nm Device Dimensions for High Performance Analog Application
Sponsored by: DRDO
Duration: 36 months (i.e. 2005-2008)
Worth: Rs. 13.37 Lakhs

Title: Physics Based Modeling, Simulation and Electrical Characterization of a Novel Device Architecture: Silicon on Nothing (SON) MOSFET for Sub-100 nm Device Dimensions
Sponsored by: DRDO
Duration: 36 months (i.e. 2005-2008)
Worth: Rs. 31.68 Lakhs

Title: Modeling Simulation and Characterization of Quantum Mechanical Effect in Nano Scale MOSFETs for ULSI Circuit Applications
Sponsored by: DST
Duration: 48 months (i.e. 2003-2007)
Worth: Rs. 16.68 Lakhs

Title: Analytical 2-Dimensional Modeling Simulation and Characterization of AlGaN/GaN HEMT/MESFET Devices for Microwave Frequency Applications
Sponsored by: CSIR
Duration: 36 months (i.e. 2002-2005)
Worth: Rs. 5.88 Lakhs

Title: Design, Optimization and Simulation of Dual Material Gate (DMG)- Structure for Improved Hot-Electron Effect and Gate Transport Efficiency of Sub-100nm MOSFET for RF Applications (Co-PI)
Sponsored by: DRDO
Duration: 48 months (i.e. 2003-2007)
Worth: Rs. 22.62 Lakhs

Title: Modeling, Simulation & Characterization of Silicon based Submicron Semiconductor Devices for Higher Design Reliability (Co-PI)
Sponsored by: DRDO
Duration: 36 months (i.e. 2002-2005)
Worth: Rs. 24.75 Lakhs

Title: Accurate Physics based Analytical Modeling of 6H/SiC MOSFETs for High Power High Temperature and Microwave Frequency Applications. (Co-PI)
Sponsored by: DRDO
Duration: 36 months (i.e. 2002-2005)
Worth: Rs. 24.47 Lakhs

Title: Two Dimensional Temperature and Bias dependent Noise Analysis and Improved Equivalent Circuit Model of InP HEMTs for Microwave Characterization (PI)
Sponsored by: DRDO
Duration: 36 months (i.e. 2002-2005)
Worth: Rs. 21.17 Lakhs

Title: Modulating Frequency and Scattering Dependent Optically Controlled Electrical Characteristics of Si/GaAs OPFET 77K-35K for its Potential Applications in Optical Communication System (Co-PI)
Sponsored by: DRDO
Duration: 36 months (i.e. 1999-2002)
Worth: Rs. 11.18 Lakhs